Mathematics of Computation, Vol. 59, No. 200 (Oct., 1992), pp. 383-401 (19 pages) In this paper a new explicit finite element method for numerically solving the drift-diffusion semiconductor device ...
(Nanowerk News) Researchers have demonstrated ultrafast surface dynamics measurements of bulk semiconductors (SI-InP and SI-GaAs) using a terahertz (THz) nanoprobing method. The Korean research team ...
Proposed multijunction electroluminescent cooling system, consisting of multiple semiconductor layers with different band gaps (the energy needed to move an electron so it can conduct electricity).
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