AZOM

Plasma Etching of SiO2 with High Selectivity Against Si3N4 and Si

Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
Semiconductor Engineering

Accelerating Dry Etch Processes During Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
Nanowerk

New metrology for tuning the etch rate uniformity in plasma etch processes

(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Nature

Plasma Chemistry and Etching Processes in Semiconductor Fabrication

Plasma chemistry and etching processes form the backbone of modern semiconductor fabrication, enabling the precise patterning and removal of material layers essential to device performance. By ...
AZOM

An Introduction to Ion Beam Etching

A review of Ion Beam technology is presented in this paper. The key applications and benefits of using ion beam technology for etching processes in comparison to technology such as plasma etching will ...