GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

Motor control, particularly frequency-controlled drives, is a technology that has advanced quickly in recent years as a result of the widespread use of motors in a variety of applications and the ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...

EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. ANDOVER, Mass.--(BUSINESS WIRE)--EPC Space ...

Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ architecture vehicles. The ...

The iP2010 and iP2011 are members of the first family of commercial integrated power-stage products using a GaN-based power device technology platform. The family of devices is designed for multiphase ...

Collaboration expands onsemi’s power portfolio to include high-performance 650V lateral GaN solutions for AI data centers, automotive, aerospace, and other critical markets onsemi expands its ...

High voltage power semiconductor devices are integral components in modern electrical systems, enabling efficient switching and control in a range of applications from renewable energy converters to ...

Following its acquisition of US-based GaN pioneer Transphorm, Renesas Electronics is ramping up its ambitions in the wide-bandgap power semiconductor space. With a bold pivot away from the crowded ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

onsemi (Nasdaq: ON) today announced it has signed a collaboration agreement with GlobalFoundries (Nasdaq: GFS) (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s ...