Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
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Joint research validates new semiconductor etching process, achieving five times speed improvement
A collaborative research team from Nagoya University and Tokyo Electron Miyagi Ltd. has demonstrated that the company's new ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Plasma chemistry and etching processes form the backbone of modern semiconductor fabrication, enabling the precise patterning and removal of material layers essential to device performance. By ...
Mass spectrometry, by contrast, is a powerful technique for the analysis of any process gas. Careful consideration of differences in pressure, reaction time scales and process flow is essential for ...
What is Reactive Ion Etching (RIE)? Reactive Ion Etching (RIE) is a dry etching technique widely used in the fabrication of micro- and nanodevices. It combines the chemical reactivity of reactive ...
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