Members can download this article in PDF format. Power systems employ diodes to perform a variety of functions. For example, diodes can protect against damage due to power-source reverse-polarity ...

Diodes are an essential component in many systems, but using them for reverse-connection protection in automotive and other power applications has one weakness: Their forward voltage drop (which can ...

KYOTO, Japan, Oct. 23, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high ...

A key subsystem in a programmable logic controller is the analog input module, which provides a high-precision front end to measure a wide variety of sensors. In many cases, however, the amplifier ...

The Power Schottky diodes product portfolio of IXYS has extended its products in DPak (TO-252) packages and lowered power applications. The product line has six new Schottky diodes of the 2nd ...

Nexperia has put an ideal diode, including its p-channel mosfet, and reverse polarity protection, in a 2.1 x 1.25 x 0.95mm TSSOP6 package. Called NID5100, it is aimed at industrial and consumer ...

Since wireless radio transmissions were first achieved in the 1880s, telecommunications have evolved to the point where instant global communication is a daily reality, currently contributing more ...

As a result, it can now deliver high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras. Modern ADAS cameras and similar systems require ...

Modern ADAS cameras and similar systems require higher pixel counts to meet demand for greater precision. This has created a growing concern -- the risk of damage caused by photovoltaic voltage ...

VF vs IR Characteristic Comparison Supports higher resolution image sensors. The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm) that offers both space efficiency and ...

Combines low VF with low IR which is ideal for protection applications. Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an ...

Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R ...